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发明名称
MOSFET AND FABRICATION METHOD
摘要
申请公布号
US5087582(A)
申请公布日期
1992.02.11
申请号
US19890396844
申请日期
1989.08.21
申请人
INMOS LIMITED
发明人
CAMPBELL, RICHARD N.;THOMPSON, MICHAEL K.;HAASE, ROBERT P.
分类号
H01L27/092;H01L21/336;H01L21/8238;H01L29/78
主分类号
H01L27/092
代理机构
代理人
主权项
地址
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