| 摘要 |
PURPOSE:To prevent a resist piece from being scattered by a method wherein, before a photosensitive resist is destroyed, the intensity of illumination is changed in such a way that the generation amount of a gas is set to an amount which does not destroy the photosensitive resist. CONSTITUTION:A photosensitive resist 23 formed on a silicon substrate 21 is irreadiated with light 29; an exposure operation for one round is executed. The intensity of illumination is set at 352 to 398 (mW/cm<2>). A photosensitizer 25 is reacted and N2 gas is generated. At the intensity of illumination, the generation amount of N2 gas exceeds the discharge amount of N2 gas, and an N2 gas reservoir 31 is formed between the substrate 21 and the resist 23. Then, the intensity of illumination of the light 29 is changed to 140 to 152 (mW/cm2); an exposure operation for one round is executed. In succession, the intensity of illumination of the light 29 is changed to 352 to 398 (mW/cm2); and an exposure operation for 4 to 6 rounds is executed. In this case, the density of the photosensitizer 25 in the resist 23 is already low. As a result, the generation amount of N2 gas does not exceed the discharge amount of N2 gas; and the pressure inside the gas reservoir 31 is not increased. As a result, it is possible to prevent one part of the resist 23 form being separated and scattered. |
