| 摘要 |
PURPOSE:To reduce the number of processings and eliminate the generation of cracks on a solder layer between both sides induced differential expansion coefficients of a metallized insulation board and a heat sink by using an iron- made heat sink, plating the top of the sink with nickel so as to form the plated layer, and forming a grounding bonding seat by means of aluminum deposition. CONSTITUTION:This hybrid integrated circuit device comprises an iron-made heat sink 21, whose top is nickel-plated where the thermal expansion coefficient of the iron material is smaller than that of an aluminum material, a wire bonding seat 24 grounding on a nickel plating layer 11 formed on the top of the heat sink 21 by aluminum vapor deposition, a hybrid integrated circuit substrate 5 positioned on the plating layer 11, bonded thereon with a bonding agent 16, a metallized insulation board 12 positioned on the plating layer 11, laminated successively respectively and bonded with solder 13, a primary heat sink 14 and a power semiconductor device 15, and an aluminum wiring 8 wire- bonded with both a wire pad 6 on the hybrid integrated circuit substrate 5 and a wire bonding seat 24.
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