THIN FILM RESISTOR ELEMENT

摘要

PURPOSE:To suppress an irregularity in a resistance temperature coefficient and to improve an adhering strength of a thin film electric resistor to a ceramic carrier by setting the mean crystalline grain size in an alumina carrier to 0.4-6 mum in a thin film resistor element in which the resistor is formed on the alumina carrier. CONSTITUTION:A thin metal film 12 having a predetermined width is spirally secured on the outer surface of an alumina carrier 10 to form a thin film electric resistor. Leads 14, 14 are electrically connected at the end of the film 12 to both side opening ends of the carrier 10 through a connector 16. An overcoating glass layer 18 is so formed as to integrally cover the outer surface of the carrier 10 formed with the film 12 with the outer surface of the connector 16. The mean crystalline grain size in the carrier 10 is set to 6 mum or less to effectively prevent peeling. The grain size is set to 0.4 mum or more to effectively suppress an irregularity in resistance temperature coefficient in the obtained thin film resistor element.