| 摘要 |
<p>PURPOSE:To execute the decision of the state of a memory cell signal with a stable operation allowance by selecting a first or a second sense amplifying circuit, respectively by a selecting circuit, when a semiconductor memory is provided on an apparatus driven by a comparatively high or low power supply voltage. CONSTITUTION:When a semiconductor device is provided on a general apparatus driven by 5V or 3V, a first sense amplifying circuit 1a which uses 5V as a power supply voltage executes a decision of L or H of a memory cell signal 32 with an operation allowance to the high side and the low side, respectively centering around 5V, as a reference voltage for deciding two states of conduction and nonconduction of a storage element in a memory cell array 3. A second sense amplifying circuit 1b which uses 3V as the power supply voltage executes a decision of L or H of the memory cell signal 32 with an operation allowance to the high side and the low side, respectively centering around 3V.</p> |
