发明名称 Quantum field effect device.
摘要 <p>Semiconductor devices having at least three terminals and a single PN junction using quantum-effect tunneling for the primary conduction modes, including gates 32 and 34, drains 28 and 30, and sources 24 and 26, with the capability of operation in a unidirectional mode with implicit well taps or in bidirectional mode for pass gates. &lt;IMAGE&gt;</p>
申请公布号 EP0469807(A2) 申请公布日期 1992.02.05
申请号 EP19910306888 申请日期 1991.07.26
申请人 CAVANAUGH, MARION EUGENE 发明人 CAVANAUGH, MARION EUGENE
分类号 H01L29/80;H01L29/739 主分类号 H01L29/80
代理机构 代理人
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