| 摘要 |
<p>PURPOSE:To delete a mask occupying area without connecting many transistors by providing an inverter which inputs a potential at a connecting point of a fuse and a thin film transistor, and connecting to feedback the output of the inverter to the control electrode of a transistor. CONSTITUTION:A fuse F11 connected in series with a P-channel type thin film transistor QP11 in which a channel region, a source region and a drain region are formed of polysilicon thin films is provided, an inverter which inputs a potential of its connecting point 1 is provided, and its output is connected to be fed back to the control electrode of a P-channel type thin film line QP11. The inverter has complementary transistors QP12, QN12, and QP13, QN13. The thin film transistor has a drain current of an ON state which is about thousand times as small as that of a normal MOS transistor, while the drain current of an OFF state is more than hundred times as large as that. Accordingly, the ON resistance of RP11 can be set to remarkably larger value than the resistance of the fuse F11, and a mask occupying area can be remarkably reduced.</p> |
