发明名称 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE
摘要 <p>PURPOSE:To supply a general article for normal and a special article for low voltage action by the same chip by constituting so as to select and to switch either a first sense amplifier or a second one. CONSTITUTION:When a selecting signal 24 becomes an 'H' level, a normal sense amplifier 14 becomes inable when a signal, the inverse of ce 1 is an 'L' level. Then, the information of a selected memory cell is discriminated to be '1' or '0' by an amplifier 14 and an NAND circuit 22 and is outputted to a sense amplifier output 2. When a VPROM is not programmed in this way, the amplifier 14 is selected. Next, when a signal 24 becomes the 'L' level, a sense amplifier for low power source voltage action 23 becomes inable when the signal 1 is the 'L' level. Then, the information of the selected memory cell appears on a line 4, is discriminated to be '1' or '0' by the amplifier 23 and the circuit 22 and is outputted to the output 2. When the VPROM is programmed in this way, the amplifier 23 is selected.</p>
申请公布号 JPH0430395(A) 申请公布日期 1992.02.03
申请号 JP19900135717 申请日期 1990.05.25
申请人 MITSUBISHI ELECTRIC CORP 发明人 KOSHIYOU TATSUKI;YAMASHITA MASAYUKI
分类号 G11C17/00;G11C16/06 主分类号 G11C17/00
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