发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 <p>PURPOSE:To supply a general article for normal and a special article for low voltage action by the same chip by constituting so as to select and to switch either a first sense amplifier or a second one. CONSTITUTION:When a selecting signal 24 becomes an 'H' level, a normal sense amplifier 14 becomes inable when a signal, the inverse of ce 1 is an 'L' level. Then, the information of a selected memory cell appears on a drain line 4, is discriminated to be '1' or '0' by the amplifier 14 and an NAND circuit 22 and is outputted to an output 2. The amplifier 14 is selected by wire-bonding the signal 24 with a power source Vcc in this way. Next, when the signal 24 becomes the 'L' level, a sense amplifier for low power source voltage action 23 becomes inable when the signal 1 is the 'L' level. Then, the information of the selected memory cell appears on the line 4, is discriminated to be '1' or '0' by the amplifier 23 and the circuit 22 and is outputted to the output 2. The amplifier 23 is selected by wire-bonding the signal 24 with GND.</p>
申请公布号 JPH0430396(A) 申请公布日期 1992.02.03
申请号 JP19900135718 申请日期 1990.05.25
申请人 MITSUBISHI ELECTRIC CORP 发明人 KOSHIYOU TATSUKI;YAMASHITA MASAYUKI
分类号 G11C17/00;G11C16/06 主分类号 G11C17/00
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