| 摘要 |
PURPOSE:To evaluate light intensity distribution correctly regardless of a surface refractory layer and an aspect ratio by forming a development-resisting film which is immiscible with a resist film and is free from any reaction to a developing solution after the resist film is exposed and before its film is developed. CONSTITUTION:A resist film 2 is applied to the surface of a substrate 1 to a uniform thickness and, after performing prebaking, the film is exposed through a mask 3 equipped with an evaluation pattern. Then a film 4 that is immiscible with the resist film 2 and is free from any reaction to a developing solution for the resist film 2 is applied to the resist film 2. Subsequently, the resist film 2 is cut so that the evaluation pattern may appear and then, the side face of an exposure part 2a in the resist film 2 can be exposed. Namely, the resist film 2 is cut through the exposure part 2a perpendicularly to the surface of the development-resisting film 4. In this way, after cutting the resist film so that the side face of the exposure part 2a in the resist film 2 is exposed to the outside, only the exposure part 2a of the resist film 2 is removed after dissolving the exposure part by making the developing solution act on the exposure part. |
