发明名称 Method of making an array device with buried interconnects
摘要 Bitlines (34) are formed by creating a diffused region (26) around the sidewalls and bottom of a trench (20). The trench (20) is filled with a conductive region (30), typically a refractory metal, refractory metal silicide.
申请公布号 US5084418(A) 申请公布日期 1992.01.28
申请号 US19900465563 申请日期 1990.01.16
申请人 TEXAS INSTRUMENTS INCORPORATED 发明人 ESQUIVEL, AGERICO L.;TIGELAAR, HOWARD L.;MITCHELL, ALLAN T.
分类号 H01L21/74;H01L23/535 主分类号 H01L21/74
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