发明名称 |
Method of making an array device with buried interconnects |
摘要 |
Bitlines (34) are formed by creating a diffused region (26) around the sidewalls and bottom of a trench (20). The trench (20) is filled with a conductive region (30), typically a refractory metal, refractory metal silicide.
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申请公布号 |
US5084418(A) |
申请公布日期 |
1992.01.28 |
申请号 |
US19900465563 |
申请日期 |
1990.01.16 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
ESQUIVEL, AGERICO L.;TIGELAAR, HOWARD L.;MITCHELL, ALLAN T. |
分类号 |
H01L21/74;H01L23/535 |
主分类号 |
H01L21/74 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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