| 摘要 |
<p>PURPOSE:To decrease electrode disconnections which are hardly correctable and to make production at a higher yield by gradually decreasing the concn. of the constituting elements of an underlying insulating film from the underlying insulating film toward a lower electrode in the boundary part between the underlying insulating film and the lower electrode of a MIM element and specifying the thickness of the decrease region. CONSTITUTION:The underlying insulating film 2 is formed by reactive sputtering on a glass substrate 1. In such a case, the sputtering gas is Ar+O2 and the target is Ta, and the sputtering is kept as it is even after the underlying insulating film 2 is sputtered to a desired thickness. The partial pressure of O2 of the sputtering gas is, however, decreased gradually to 0 partial pressure of the O2 and thereafter, the lower electrode 3 is sputtered this time to the desired thickness, then the lower electrode 3 is patterned by dry etching. The 0 concn. increases the nearer the underlying insulating film in the 0 decrease region 4 and, therefore, the electric resistance increases as well and the thickness of the formed element insulating film decreases. The thickness of the decrease region 4 is made to exist at least at >=200Angstrom . The electrode disconnections which are hardly correctable are decreased in this way and the production at the higher yield is executed.</p> |
