| 摘要 |
PURPOSE:To improve a yield of manufacture and the reliability of a wiring by a method wherein an insulating film is removed by etching it until a work line is exposed, an upper-layer insulation film bring connected and located in an etching region is opened and a backed wiring is so formed as to cover the opening. CONSTITUTION:An insulating film is removed by etching it until a word line 1 is exposed, upper-layer insulation films 9 and 10 being connected and located in an etching region are opened, and a backed wiring is so formed as to cover the opening. The whole of a cell region being covered with an etching mask after a bit line 3 in a cell is formed, the insulating film is removed by etching it until the work line 1 is exposed, in this way. Thereby a contact hole formed in this part is made shallow, step coverage of the backed wiring is thereby improved, and thus a yield of manufacture and the reliability of the wiring can be improved. |
