| 摘要 |
PURPOSE: To make decision of specific contact resistance easier in the contact region adjoining an access region of a lower side layer of two laminated semiconductor layers formed in a center region, allowing a metal pad to form an ohmic contact to an upper layer or a lower layer. CONSTITUTION: For the semiconductor device, two of the same conductive type, semiconductor layers 41 and 42 are laminated, with the characteristics decided by respective net resistancesρs andρs↓' to an active layer 41 and a cap layer 42. The characteristics of a so-called access region 45 on both sides of a center region 44 of the device is decided by a net resistance of an active layer 41ρs and its lengths I and I2 . On a contact region 46 adjoining the access region, metal/semiconductor ohmic contact point is formed with a metal layer 43, with characteristics of the contact region decided by a contact resistance Rc . Thereby, a specific contact resistance (ρc↓') at the interface between the cap layer and the active layer is easily and separately decided.
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