发明名称 SEMICONDUCTOR DEVICE
摘要 <p>PURPOSE:To enable absorption of a stress given to a soldered part, by a method wherein the length of an outer lead so bent as to project in the direction opposite to the soldered side is made larger than a length from an outer-lead buried part of a semiconductor device to the base part of the semiconductor device. CONSTITUTION:The length L1 of an outer lead 2A bent onto the opposite side to a package surface is made larger than a length l from an outer-lead buried part 7A of a semiconductor device 4A to the base part thereof. In this way, the outer lead 2A is so bent as to project in the direction opposite to the soldered side of the semiconductor device 4A and, in addition, the length L1 of the bent outer lead 2A is larger than the length l from the outer-lead buried part 7A of the semiconductor device 4A to the base part thereof. Therefore, a strain caused by a thermal stress in a heat cycle test of the semiconductor device is reduced and thus reliability is improved.</p>
申请公布号 JPH0423460(A) 申请公布日期 1992.01.27
申请号 JP19900126981 申请日期 1990.05.18
申请人 MITSUBISHI ELECTRIC CORP 发明人 MURASAWA YASUHIRO;TODA HITOSHI;SAWANO HIROSHI;YAGOURA HIDEYA
分类号 H01L23/50;H01L23/495;H05K3/34 主分类号 H01L23/50
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