| 摘要 |
A method for etching an organic anti- reflective coating (ARC) layer on a substrate in a plasma processing system comprising: introducing a process gas comprising ammonia (NH 3), and a passivation gas; forming a plasma from the process gas; and exposing the substrate to the plasma. The process gas can, for example, constitute NH3 and a hydrocarbon gas such as at least one of C2H4, CH4, C2H2, C 2H6, C3H4, C3H6, C 3H8, C4H6, C4H8, C 4H10, C5H8, C5H10, C 6H6, C6H10, and C6H12. Additionally, the process chemistry can further comprise the addition of helium. The present invention further presents a method for forming a bilayer mask for etching a thin film on a substrate, wherein the method comprises: forming the thin film on the substrate; forming an ARC layer on the thin film; forming a photoresist pattern on the ARC layer; and transferring the photoresist pattern to the ARC layer with an etch process using a process gas comprising ammonia (NH3), and a passivation gas.
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