TWO-LIGHT FLUX INTERFERENCE EXPOSURE DEVICE, TWO-LIGHT FLUX INTERFERENCE EXPOSURE METHOD, SEMICONDUCTOR LIGHT EMITTING ELEMENT MANUFACTURING METHOD, AND SEMICONDUCTOR LIGHT EMITTING ELEMENT

摘要

It is possible to realize a 2-light flux interference exposure device capable of generating a significantly uniform laser beam having a high coherence by using a double higher harmonic of Ar laser or a quadruple higher harmonic of Nd dope YAG laser as a light source, an etalon, and a half-wavelength plate. Moreover, by the 2-light flux interference exposure, a photo resist mask is subjected to exposure of cyclic pattern. The photo resist mask is developed. By using the resist pattern as a mask, a semiconductor layer etching mask pattern is formed. After the resist is removed, the light extraction surface is etched. Thus, it is possible to manufacture a semiconductor light emitting element having a high energy conversion efficiency at a significantly low cost.