| 发明名称 |
Improving NROM device characteristics using adjusted gate work function |
| 摘要 |
A method including adjusting a threshold voltage of an NROM (nitride, read only memory) device by adjusting a work function associated with a gate terminal of the NROM device.
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| 申请公布号 |
US2007087503(A1) |
申请公布日期 |
2007.04.19 |
| 申请号 |
US20050253272 |
申请日期 |
2005.10.17 |
| 申请人 |
SAIFUN SEMICONDUCTORS, LTD. |
发明人 |
LUSKY ELI |
| 分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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