| 摘要 |
An enhanced halogenated plasma for ion-assisted plasma etches to which silicon tetrabromide has been added to retard erosion, flowing and reticulation of photoresist, particularly during an etch of an aluminum or tungsten metal layer. The added resistance to erosion, flowing and reticulation is greater than that achieved through the addition of silicon tetrachloride to the same plasma. It is postulated that a silicon-containing layer is deposited on horizontal and vertical surfaces of photoresist at a faster rate than that possible for silicon tetrachloride. As with silicon tetrachloride, resist loss still occurs, but at a much reduced rate, with loss on the upper surfaces of the photoresist segments (these surfaces being perpendicular to the RF field of the reactor) occurring at a higher rate than loss on vertical surfaces (these surfaces being parallel to the RF field of the reactor).
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