| 摘要 |
PURPOSE:To prevent cracks by forming a mesa groove, in which a semiconductor layer is etched to a substrate, below a surface electrode formed of a common electrode to which a collector electrode and a collector electrode which is electrically connected to the outside are linked. CONSTITUTION:A first conductive GaAs layer 2 is grown to a predetermined thickness on a first conductive Si substrate 1. Then, a second conductive GaAs layer 3 and a second conductive AlGaAs layer 4 are formed thereon. At this time, a GaAs layer is not selectively grown on mesa grooves 8a, 8b. A reflection prevention film 5 is formed on the second conductive AlGaAs layer 4 and the mesa grooves 8a, 8b. The reflection prevention film 5 is etched in all the mesa groove 8a. In the mesa groove 8b, the reflection prevention film 5 is etched so as for the mesa groove 8a to contact the second conductive GaAs layer 3. Then, surface electrodes 6, 6' and a rear surface electrode 7 are formed. As a result, cracks which occur inside the solar cell due to electrode stress can be prevented without decreasing efficiency. |
