MANUFACTURING METHOD OF MOSFET

摘要

MOS transistor is manufactured by (a) forming field oxide film on the P type semiconductor substrate except element forming region, (b) forming gate insulation film on the element forming region of the substrate, (c) forming gate electrode layered with polysilicon (1000-1000 angstrom thick) and silicide (1000-3000 angstrom thick) on the gate insulation film (d) forming and etching back oxide film on the upper side of substrate, (e) forming thermal oxidation film on the gate electrode, (f) ion- implanting the first and second impurities on the substrate, and (g) activating the ion-implanted region to form source and drain regions.