发明名称 |
Wavelength tunable laser diode. |
摘要 |
<p>A wavelength tunable laser diode comprises a temperature variable heater (8) separated from an active layer (1) by a distance less than the thickness of a compound semiconductor substrate (3). Because the heater (8) is located very close to the active layer (1), the response time of temperature change is improved. That in turn widens the tunable range of the laser diode. <IMAGE></p> |
申请公布号 |
EP0465914(A2) |
申请公布日期 |
1992.01.15 |
申请号 |
EP19910110430 |
申请日期 |
1991.06.25 |
申请人 |
HITACHI, LTD. |
发明人 |
SAKANO, SHINJI;OKA, AKIHIKO;SAITO, KATUTOSHI;CHINONE, NAOKI |
分类号 |
H01S5/00;H01S5/026;H01S5/042;H01S5/06;H01S5/062;H01S5/0625;H01S5/343 |
主分类号 |
H01S5/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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