METHOD OF FORMING ELECTRICAL CONTACT BETWEEN INTERCONNECTION LAYERS LOCATED AT DIFFERENT LAYER LEVELS,申请号US19900532709-传众专利搜索

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发明名称	METHOD OF FORMING ELECTRICAL CONTACT BETWEEN INTERCONNECTION LAYERS LOCATED AT DIFFERENT LAYER LEVELS
摘要
申请公布号	US5081064(A)	申请公布日期	1992.01.14
申请号	US19900532709	申请日期	1990.06.04
申请人	FUJITSU LIMITED	发明人	INOUE, MINORU;IWAMA, RYUJI
分类号	H01L21/768;H01L23/522	主分类号	H01L21/768
代理机构		代理人
主权项
地址

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