| 摘要 |
PURPOSE:To easily form both a P-type electrode and an N-type electrode on the same surface, by forming a second semiconductor layer on the side surface and the back surface of a first semiconductor layer by using diffusion technique. CONSTITUTION:Structure necessary for a solar cell is formed on a first semiconductor layer 1 by using growth technique; an antireflection film 4 is formed on the surface of a semiconductor layer 3; a second semiconductor layer 2 is formed on the side surface and the back surface of a first semiconductor layer 1 by using seal diffusion technique. After parts of the film 4 and the layer 3 unnecessary for forming a P-type electrode 5 are eliminated by photolithography, etching process, etc., a P-type electrode 5 is formed, by vapor deposition, on the second semiconductor layer 2 formed on the eliminated region and the side surface of the semiconductor layer 1. In the state that a region necessary for an N-type electrode 6 is covered by photolitography technique, a P-type electrode 5 is formed on the back surface by vapor deposition, and a second semiconductor layer 2 in the region of the N-type electrode 6 is eliminated. Then the N-type electrode 6 is formed by vapor deposition. Thereby both the P-type electrode 5 and the N-type electrode 6 can be formed on the same surface. |
