| 发明名称 |
PLASMA ETCHING INDIUM TIN OXIDE USING A DEPOSITED OXIDE MASK |
| 摘要 |
The use of a deposited oxide mask permits higher power to be used when ITO is etched by a plasma containing CH3. and AR<+> thereby increasing the etch rate of ITO. |
| 申请公布号 |
WO9200609(A1) |
申请公布日期 |
1992.01.09 |
| 申请号 |
WO1991US04347 |
申请日期 |
1991.06.19 |
| 申请人 |
EASTMAN KODAK COMPANY |
发明人 |
ROSELLE, PAUL, L. |
| 分类号 |
G02F1/1343;G03F7/40;H01L21/302;H01L21/3065;H01L27/146;H01L31/18 |
主分类号 |
G02F1/1343 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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