MANUFACTURE OF MOS FIELD-EFFECT TRANSISTOR,申请号JP19900107070-传众专利搜索

首页产品黄页商标征信

会员服务注册登录

法人/股东/高管

发明名称	MANUFACTURE OF MOS FIELD-EFFECT TRANSISTOR
摘要
申请公布号	JPH045831(A)	申请公布日期	1992.01.09
申请号	JP19900107070	申请日期	1990.04.23
申请人	NEC CORP	发明人	AMAKUBO HIROAKI
分类号	H01L21/336;H01L29/78	主分类号	H01L21/336
代理机构		代理人
主权项
地址

您可能感兴趣的专利

SOUND PITCH CONTROLLING DEVICE FOR ELECTRONIC MUSICAL INSTRUMENT

ONE-COMPONENT NONMAGNETIC DEVELOPER

MAGNETIC LEVITATION TYPE VEHICLE

SHEET FEED CASSETTE

AIR PASSAGE CHANGE-OVER DEVICE OF SHEET CARRIER DEIVCE

HEADLAMP DRIVE DEVICE FOR CAR

ENCODING DEVICE AND DECODING DEVICE OF IMAGE SIGNAL

PHOTOCOUPLER AND MANUFACTURE THEREOF

FISSURE PLATE FOR INCLINED ELEVATOR

FILM SCREEN FOR COPYING MACHINE

SOUND REPRODUCING DEVICE

VERFAHREN UND VORRICHTUNG ZUM HERSTELLEN VON KLAPPSCHACHTELN MIT KRAGEN

LIQUD CRYSTAL DIPLAY ELEMENT USING PLASTIC FILM

AIR CONDITIONER

AIR-CONDITIONING SYSTEM

Operating air conditioning unit for vehicle - heating vaporiser at low temperatures to prevent icing

ANTIBIOTIKUM A42125 UND VERFAHREN ZU DESSEN HERSTELLUNG.

ON-LINE TRANSMITTED AND RECEIVED DATA MONITORING SYSTEM

FINISHING OF TILE FLOOR