| 摘要 |
<p>A dynamic random access memory includes a semiconductor substrate (1) having an active region (AR) including first and second diffusion regions (D, S) of a transfer transistor, an insulating layer (2, 3) formed on the semiconductor substrate and having first and second contact holes (SH, BH), and a stacked capacitor (SC) having a storage electrode (SE) which is electrically coupled to the first diffusion region through the first contact hole formed in the insulating layer and an opposed electrode (CP). The DRAM also includes a word line (WL) electrically isolated from the semiconductor substrate, and a bit line (BL) electrically isolated from the semiconductor substrate and electrically coupled to the second diffusion region through the second contact hole formed in the insulating layer. The second contact hole is substantially positioned at a center (CL) of the bit line. The word line has a bent portion (Z, Z') located between the first and second contact holes so that the word line is separated from the second contact hole at a predetermined distance. <IMAGE></p> |
