| 摘要 |
A metal oxide semiconductor device comprising a semiconductor substrate having a semiconductor layer of a first conductivity type disposed thereon. A plurality of first regions of a second conductivity type are disposed on and embedded in a first surface of the semiconductor layer of the first conductivity type, and a plurality of second regions of the first conductivity type disposed on the first surface of the semiconductor layer between said first regions. In addition, a plurality of MOSFET structures are disposed on the surface of the semiconductor layer each structure comprising an insulating film disposed on the semiconductor layer extending over portions of two of the first regions and having an opening aligned with the second region disposed between said two first regions, a single crystal semiconductive layer of the second conductivity type disposed on the insulating film, one or more source regions of the first conductivity type disposed on and embedded the single crystal semiconductor layer, one or more drain regions of the first conductivity type disposed on and embedded the single crystal semiconductor layer at a location closer to the opening than said source region, a second insulating film disposed on the surface of the single crystal semiconductive layer, a gate electrode disposed on the insulating film, a first electrode making electrical contact between the drain region and the second region through an opening in the first insulating film, and a second electrode making electrical contact between the source region and the first region.
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