发明名称 |
Method of fabricating a raised source/drain transistor |
摘要 |
A raised source/drain transistor is provided having thin sidewall spacing insulators (54) adjacent the transistor gate (48). A first sidewall spacer (64) is disposed adjacent thin sidewall spacing insulator (54) and raised source/drain region (60). A second sidewall spacer (66) is formed at the interface between field insulating region (44) and raised source/drain region (60).
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申请公布号 |
US5079180(A) |
申请公布日期 |
1992.01.07 |
申请号 |
US19900568305 |
申请日期 |
1990.08.16 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
RODDER, MARK S.;CHAPMAN, RICHARD A. |
分类号 |
H01L21/336;H01L29/08 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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