| 摘要 |
PURPOSE:To increase the quantity of laser beams scattered, to improve the rate of detection of a detector and to conduct alignment having excellent accuracy by using a film selectively crystal-grown onto a semiconductor substrate as an alignment mark. CONSTITUTION:An insulating film 2 formed onto a semiconductor substrate 1 is patterned, and substrate exposed sections 3a, 3b, 3c corresponding to alignment marks are formed to the semiconductor substrate 1. A pattern, irregularities of which are inverted to the normally used alignment marks, is employed as the pattern of the insulating film 2. Crystal growth is performed selectively to the substrate exposed sections 3a, 3b, 3c, and thick alignment marks 4a, 4b, 4c having stepped sections with the top face of the insulating film 2 larger than the film thickness of the insulating film 2 are shaped. The patterns of the thick alignment marks 4a, 4b, 4c are equal to those of the normally used alignment marks. When the thick alignment marks 4a, 4b, 4c are employed, scattered light from the edge sections of the patterns is increases, and the rate of detection of a detector is improved, thus allowing highly accurate alignment. |
