发明名称 SEMICONDUCTOR DEVICE
摘要 <p>PURPOSE:To prevent the crack of a layer insulating film, and to obviate disconnection in an aluminum film by boring holes at a plurality of positions of an aluminum film on the lower side and bringing the insulating film of the lower layer of the aluminum film on the lower side and the layer insulating film of an upper layer into contact through the holes. CONSTITUTION:Holes 3a are bored at a plurality of positions except the central section of a pad-electrode forming region respectively in an aluminum film 3, and an insulating film 2 is exposed through the holes 3a. A layer insulating film 4 is formed onto the aluminum film 3, and a hole 4a is bored at approximately the central section of the pad-electrode forming region in the layer insulating film 4, and the aluminum film 3 is exposed through the hole 4a. The layer insulating film 4 is brought into contact with the insulating film 2 in the holes 3a of the aluminum film 3. An upper aluminum film 5 is shaped onto the layer insulating film 4 in size slightly larger than the pad-electrode forming region, a protective film 6 is formed onto the aluminum film 5, and a window is bored to the protective film 6, thus exposing the aluminum film 5, then constituting a pad electrode surface.</p>
申请公布号 JPH042130(A) 申请公布日期 1992.01.07
申请号 JP19900103420 申请日期 1990.04.19
申请人 NEC CORP 发明人 KURATA KATSUMASA
分类号 H01L23/52;H01L21/3205;(IPC1-7):H01L21/320 主分类号 H01L23/52
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