Trench gate FET with self-aligned source contact

摘要

A semiconductor device includes a substrate and a semiconductor layer having a first conductivity type. The semiconductor device further includes first and second trenches extending into the semiconductor layer from a surface of the semiconductor layer, each of the first and second trenches including a corresponding gate electrode. The semiconductor device further includes a body region having a second conductivity type different than the first conductivity type and a source contact region having the first conductivity type. The body region is disposed in the semiconductor layer below the surface of the semiconductor layer and between a sidewall of the first trench and an adjacent sidewall of a second trench. The source contact region is disposed in the semiconductor layer between the body region and the surface of the semiconductor layer and extending between the sidewall of the first trench and the corresponding sidewall of the second trench.

主权项

1. A semiconductor device, comprising:
a substrate; a semiconductor layer disposed at the substrate and having a first conductivity type; first and second trenches extending into the semiconductor layer from a surface of the semiconductor layer, each of the first and second trenches including a corresponding gate electrode; a body region disposed in the semiconductor layer below the surface of the semiconductor layer and between a sidewall of the first trench and an adjacent sidewall of a second trench, the body region having a second conductivity type different than the first conductivity type; a source contact region disposed in the semiconductor layer between the body region and the surface of the semiconductor layer and extending between the sidewall of the first trench and the corresponding sidewall of the second trench, the source contact region having the first conductivity type; and wherein:
the source contact region extends from the surface of the semiconductor layer to a first depth in the semiconductor layer; andthe body region extends from a second depth to a third depth in the semiconductor layer, the second depth greater than the first depth, such that the source contact region and the body region are separated by a region of the semiconductor layer.