BICMOS CIRCUITRY HAVING A COMBINATION CMOS GATE AND A BIPOLAR TRANSISTOR

摘要

A level shift element is contained in a through current path of a CMOS gate of a BiCMOS circuit. The level shift element limits an amplitude of an input signal to the BiCMOS circuit. The limited amplitude of the input signal controls the impact ionization within the CMOS gate, and the increase of a substrate current resulting from the impact ionization, and reduces the through current.