发明名称 |
Method for fabricating a metal gate electrode |
摘要 |
Exemplary methods for fabricating a metal gate electrode include forming a dielectric layer on a substrate, and forming a first trench having a first width and a second trench having a second width in the dielectric layer where the first width is less than the second width. Also included is depositing a work-function metal layer over the dielectric layer and into the first and second trenches where the deposited work-function layer is in direct contact with the top surface of the dielectric layer. A first signal metal layer is deposited over the work-function metal layer filling the second trench and a second signal metal layer is deposited filling the first trench. |
申请公布号 |
US9419100(B2) |
申请公布日期 |
2016.08.16 |
申请号 |
US201514810737 |
申请日期 |
2015.07.28 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
Tsau Hsueh Wen |
分类号 |
H01L29/66;H01L21/28;H01L21/321;H01L21/285;H01L21/311;H01L21/8238 |
主分类号 |
H01L29/66 |
代理机构 |
Hauptman Ham, LLP |
代理人 |
Hauptman Ham, LLP |
主权项 |
1. A method for fabricating a metal gate electrode, comprising:
forming a dielectric layer and a dummy gate layer over a substrate; etching the dummy gate layer to form a first trench and a second trench having a depth, the first trench having a first width and the second trench having a second width larger than the first width in the dielectric layer, wherein the first trench has a higher aspect ratio than the second trench; depositing one of an N-type or a P-type work-function metal layer over the dielectric layer and into both the first and second trenches wherein the work-function metal layer is in direct contact with the top surface of the dielectric layer; first depositing a first signal metal layer over the work-function metal layer to fill the second trench; and second depositing a second signal metal layer to fill the first trench. |
地址 |
TW |