| 摘要 |
PURPOSE:To lessen the electrical effect of a thin film transistor on the source electrode of an adjacent thin film transistor by a method wherein a metal layer provided to the upside of a semiconductor layer so as to screen the semiconductor layer from light rays is formed a little wider to cover a drain electrode. CONSTITUTION:An aluminum layer 9 formed on a channel protection insulating layer 5 so as to screen an a-Si:H semiconductor active layer 4 from light rays is formed wide to cover the upside of a drain electrode 7. A part of the Cr layer of the drain electrode 7 is led out toward a photoelectric conversion element side and connected to a wiring 9a of a transparent electrode 10 of the photoelectric conversion element. When the aluminum layer 9 is formed wider than the drain electrode 7 and led outside, most of a coupling capacity induced between the drain electrode 7 and a source electrode 8 of an adjacent thin film transistor can be induced between the drain electrode 7 and the aluminum layer 9, so that the potential fluctuation of the drain electrode 7 is prevented from affecting the source electrode 8 of an adjacent thin film transistor, and the aluminum layer 9 functions as a shield. |
