| 摘要 |
PROBLEM TO BE SOLVED: To provide a film deposition apparatus capable of suppressing abnormal discharging even when microwave electric power is increased, and achieving fast film deposition.SOLUTION: A film deposition apparatus 1 comprises: a microwave introduction port 22 for propagating a microwave for generating plasma supplied by a microwave supply part 13 as a surface wave to a sheath layer expanded with a negative bias voltage through a microwave introduction surface; and a tool 9 having conductivity on its outer peripheral surface, arranged to project from the microwave introduction port 22, and supporting a workpiece material 8 on the opposite side from the microwave introduction surface. The tool 9 includes a convergence part 9B for converging the surface wave propagated along an outer peripheral surface of the tool 9 from the microwave introduction surface to the workpiece material 8, and the convergence part 9B is formed such that a peripheral length of a surface perpendicular to the propagation direction of the surface wave is longer at an end part on the side of the microwave introduction surface 22A than at an end part on the side of the workpiece material 8.SELECTED DRAWING: Figure 1 |
