PROCESSING METHOD FOR SILICON SINGLE CRYSTALLINE SUBSTRATE,申请号JP19900095794-传众专利搜索

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发明名称	PROCESSING METHOD FOR SILICON SINGLE CRYSTALLINE SUBSTRATE
摘要
申请公布号	JPH03293718(A)	申请公布日期	1991.12.25
申请号	JP19900095794	申请日期	1990.04.11
申请人	SUMITOMO METAL IND LTD	发明人	OMA TAKAHIKO
分类号	C30B1/08;C30B29/06;H01L21/20;H01L21/208;H01L21/324	主分类号	C30B1/08
代理机构		代理人
主权项
地址

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