| 摘要 |
PURPOSE:To obtain a field-effect transistor, in which the peeling of a bonding pad is hardly generated, by a method wherein at least one part of the surface of a semiconductor substrate is formed into a roughened form and a gate metal film is formed on the roughened part of the surface in such a way as to correspond to the roughened form. CONSTITUTION:A spacer insulating film 4 consisting of silicon dioxide is evenly applied on a gallium-arsenic substrate 1 by a chemical deposition method. After then, a square part only arranged in a lattice type in the surface of the substrate 1 is etched, recesses and projections are formed and a gate metal film 2, which is formed into a form a conformed to the recesses and projections and consists of Ti and Al, is applied and formed on the recesses and projections by a vacuum deposition method. Then, a surface protective film 5 consisting of silicon dioxide is applied and formed on the substrate 1 and the film 2, a perforating work is performed with a hydrofluoric acid and after then, a wiring metal film 3 consisting of Ti, Pt and Au is deposited in a vacuum on the film 2 to obtain a field-effect transistor. |
