发明名称 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To prevent a wiring part from becoming thin and from being disconnected during the formation of the wiring part and to enhance a product yield and reliability by a method wherein a mask region for dummy wiring part use is installed in a mask to be used during the formation of the wiring part for a semiconductor device and a dummy wiring part is installed by using this mask in addition to an element wiring part which is used actually. CONSTITUTION:A dummy pattern 4 of chromium oxide is installed additionally on a mask 1; a dummy wiring part 8 corresponding to the pattern is installed also on a chip 5; a ratio of a wiring part to a chip area is increased from 2.5% to about 40%. As a result, an effect that a resist adheres to a side wall in order to prevent side etching of the wiring part during an etching operation is increased remarkably; a phenomenon that wiring parts 7, 8 become thin and are disconnected after the etching operation is not caused.
申请公布号 KR910010219(B1) 申请公布日期 1991.12.21
申请号 KR19880011034 申请日期 1988.08.30
申请人 TOSHIBA CORP. 发明人 HIROSAWA DATSUYA
分类号 G03F1/00;H01L21/027;H01L21/30;H01L21/3205;H01L21/3213;H01L21/768 主分类号 G03F1/00
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