发明名称 SUBSTRATE VOLTAGE GENERATING CIRCUIT FOR SEMICONDUCTOR DEVICE EQUIPMENT WITH INTERNAL STEP-DOWN POWER SUPPLY VOLTAGE
摘要 PURPOSE:To reduce current consumption by providing an internal step-down power supply voltage equipped with a means to detect the impression of an external power supply voltage to a semiconductor device and a means to selectively activate first and second substrate bias impressing means in response to an output signal from this detecting means. CONSTITUTION:A ring oscillator 1 is provided to be operated with an external power supply voltage Vocc as an operation power supply voltage, and a ring oscillator 2 is provided to be operated with an internal power supply voltage Vicc, which is obtained by dropping the external power supply voltage, as the operation power supply voltage. Then, a charge pump circuit 3 is provided to supply a bias voltage to a semiconductor substrate in response to an oscillation signal f1 from the ring oscillator 1, and a charge pump circuit 4 is provided to impress the bias voltage to the semiconductor substrate in response to an oscillation signal f2 from the ring oscillator 2. By selectively operating the charge pump circuit 3 or 4 corresponding to a substrate potential, the optimum substrate bias voltage is stably supplied to the semiconductor substrate with the low current consumption. Thus, a substrate voltage generating circuit can be obtained with high reliability and low current consumption.
申请公布号 JPH03290894(A) 申请公布日期 1991.12.20
申请号 JP19900092546 申请日期 1990.04.06
申请人 MITSUBISHI ELECTRIC CORP 发明人 ARIMOTO KAZUTAMI
分类号 G05F3/20;G11C11/408;H01L21/822;H01L21/8242;H01L27/04;H01L27/108;H03F1/30;H03F3/345 主分类号 G05F3/20
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