| 摘要 |
PURPOSE:To form a resist pattern without having a transfer process using the dry developing such as etching and the like by a method wherein a double layer resist process, consisting of the upper and lower layer, is introduced, a layer having the developing speed higher than the upper layer is provided as the lower layer, and both upper and lower layers are developed continuously. CONSTITUTION:An Si wafer 10 is coated with a first resist 11. A positive type resist is used as this lower layer resist 11. The resist 11 should be in sufficient thickness with which the roughness of the surface of the wafer 10 can be flattened. Then, a mercury radiant light 21 is made to irradiate on the whole surface of the resist 11. Subsequently, the first resist 11 is coated with a second resist 12. A positive type resist, showing the photosensitive characteristics to the 248nm of KrF excimer laser is used for the above-mentioned resist 12, and its thickness should be thinner than the resist 11. Then, the oscillating rays 22 of KrF excimer laser are made to radiate on a pattern region in the irradiation dose of radiant ray necessary for formation of pattern. Then, a heat treatment is conducted, and the first and second resists 11 and 12 are developed simultaneously. |
