| 摘要 |
PURPOSE:To obtain high precision of pattern and to increase throughput of an electron beam exposing device by using a thermally crosslinking and decomposing type photosensitive resin comprising a copolymer having high resistance to dry-etching and a copolymer having high sensitivity. CONSTITUTION:Positive photosensitive resin film 2 for electron beam (EB) exposure is formed on a substrate 1 from a mixture comprising a base first copolymer A prepd. by copolymerising a monomer having dry-etching resistance with an acid-contg. monomer, and a second copolymer B functioning as a crosslinking agent and being prepd. by copolymerising a monomer having high decomposition efficiency with p-chloroformylphenyl methacrylate. Both copolymers A, B in the resin film 2 are crosslinked by heat-treatment. Then, the resin film 2 is irradiated with EB to cause selective decomposition of the second copolymer in the irradiated region, and the resin film in the irradiated region is dissolved selectively with a solvent and removed to obtain a positive pattern. By this process, the throughput of an EB exposure device is increased, and the precision of pattern is improved; the improved pattern is useful for dry-etching mask for semiconductor, etc. |
