| 摘要 |
An integrated circuit capacitor is made by (a) forming successively a first main electrode layer 13, a first insulating layer 14, a first counter electrode layer 15, and a second insulating layer 16 on a substrate, the first main electrode layer having a contact region 12 in electrical contact with the substrate; (b) forming an insulating spacer 20 along an edge of the first counter electrode 15; (c) forming a second main electrode layer 18 over the second insulating layer 16 such that it projects beyond the insulating spacer and thereby makes electrical contact with the first main electrode layer 13 but is insulated from the first counter electrode layer 15; and (d) forming thereover a third insulating layer 21 and then a second counter electrode layer 22. The method can be used to produce a stacked folded capacitor with large capacitance per unit area. The capacitor is formed from four superimposed electrode layers separated by the three insulating layers. An MOS transistor may be connected to the capacitor to form a DRAM cell. <IMAGE> |
