发明名称 DC/DC CONVERTING SEMICONDUCTOR DEVICE
摘要 <p>PURPOSE:To obtain a negative voltage larger than a potential difference between a power supply potential and a ground potential by a method wherein the wells of a third and a fourth transistor are connected to a source or a drain in a switching manner respectively, and an input voltage is applied onto the source of the fourth transistor. CONSTITUTION:If clock signals are applied to the gates of transistors QP1, QN1-QN3, the transistors QP1 and QN3 are turned ON and the transistors QN1 and QN2 are turned OFF when the clock signal C is kept at an H level, a voltage of VDD is applied to the positive electrode of a capacitor C1, and an input voltage of VIN is applied to the negative electrode. Therefore, the charged voltage VCI of the capacitor C1 is represented by a formula, VCI= VDD-VIN. At following timing, the transistors QP1 and QN3 are turned OFF and the transistors QN1 and QN2 are turned ON, the positive electrode of the capacitor C1 is switched to a voltage of VSS and the voltage of the negative electrode is made to decrease to a voltage lower than VSS by VCI, so that an output voltage of VOUT is represented by a formula, VOUT=-(VDD-VIN). Therefore, the input voltage VIN is represented by a formula, VDD>=VIN>=VOUT.</p>
申请公布号 JPH03280463(A) 申请公布日期 1991.12.11
申请号 JP19900080172 申请日期 1990.03.28
申请人 NEW JAPAN RADIO CO LTD 发明人 AKITA SHINICHI;TAKEUCHI TOSHIYA
分类号 H01L27/04;H01L21/822;H01L21/8234;H01L27/088;H01L33/00 主分类号 H01L27/04
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