| 摘要 |
PURPOSE:To improve the shape of accumulated energy profile which is formed as a latent image by electron beam lithography and to improve the shape of a pattern and resolution by performing the electron beam lithography and the projection of light within a specified wavelength range for resist at the same level. CONSTITUTION:In negative-type elecron-beam resit comprising novolak resin or p-hydroxystyrene resin, melamine compound and acid generating agent, the acid generating agent forms acid by the projection of the electron beam. With the acid as a catalyst, the resin and the melamine compound are bridged, and negatives property is obtained. In resist material, intense absorption is present in far infrared region. There is a window part where the absorbance becomes the minimum value in the vicinity of 240-260nm. In the p-hydroxystirene resin, the window is located in the vicinity of 248nm. In the vicinity of 265nm, epsilonbecomes large up to about 0.7mum<-1>. Then, the light is projected at this wavelength region. Thus the shape of a pattern is improved. The light is selectively projected on the wavelength region at the optimum value in the range of 0.5-1.2mum<-1> for epsilon of the resist material. Thus, the shape of the pattern is improved. |
