| 摘要 |
PURPOSE:To integrate the wiring by forming it to one layer structure, and to improve the yield for manufacturing a two-dimensional solid image pickup device, by removing the intersection of each bus of X and Y. CONSTITUTION:On a p type semiconductor substrate 36, are insulating film 37 is formed, and by this film 37, an active area 39 is defined. On this active area 39, light transmitting insulating electrodes 46-49 are placed, voltage is applied to these electrodes 46-49, wells 61-64 are formed right under the electrodes 46- 49, of which a band structure body 40 is constituted. Plural band structure bodies 40a-40d constituted in this way are arranged sideways on the insulating substrate, and band electric conductors 51-54 being light transmitting electrodes having the same potential are connected to a horizontal shift register 10. Also, voltage from a voltage switching means 70 consisting of a switch group is applied to the substrate of the structure bodies 40a-40d. Also, prescribed intervals are provided between each structure body 40a-40d, and the yield for manufacture is improved by removing the intersection of each bus of X and Y, and forming the wiring to one layer structure. |
