| 摘要 |
PURPOSE:To make it possible to improve the throughput in a unit time without complicating a control system and without enlarging an apparatus by using resist whose sensitivity is changed in response to the energy of a projected electron beam as fine resist used in highdensity LSIs especially in manufacturing steps, and changing an acceleration voltage in response to the size of a pattern. CONSTITUTION:As resist, e.g. there is a chemical amplification type utilizing acid catalyst reaction. An acceleration voltage is applied on an electron beam generated in an electron gun 1 from an acceleration-voltage applying part 2. The accelerated electron beam 3 is projected on the surface of a wafer 5 mounted on a stage 4 through an electron optic system. The resist formed on the surface of the wafer 5 is exposed by the projection of the electron beam 3. Thus, a required pattern is formed. For example, the acceleration voltage is changed to 30kV and 10kV during the processing of one chip (III). The chips 6 are sequentially processed one by one. Pads 61 at the right upper corner are drawn at the accelerating voltage 30kV. Then, a wiring pattern 62 for connecting the pads 61 is drawn. The time for moving the beam for the drawing is utilized, and the accelerating voltage is changed to 10kV during this time. |
