| 摘要 |
PCT No. PCT/JP89/00060 Sec. 371 Date Aug. 21, 1989 Sec. 102(e) Date Aug. 21, 1989 PCT Filed Jan. 24, 1989 PCT Pub. No. WO89/06863 PCT Pub. Date Jul. 27, 1989.A method for producing a semiconductor device according to the present invention comprises the following steps. A PxOy (x>0, y>0) insulating layer is formed on III-V group compound semiconductor substrate including indium and/or phosphorus. Then the substrate is subjected to heat treatment, and finally an electrode metal layer is formed on the insulating layer. This method ensures to increase the barrier height of MES type diode and the forward current-voltage characteristics of Schottky diode. Further, another method of the present invention comprises the following steps. An aluminum or indium layer is formed on III-V group compound semiconductor substrate including indium or phosphorus. The substrate is subjected to a first heat treatment. Then an insulating layer composed of phosphoric oxide PxOy (x>0, y>0) is formed on the aluminum or indium layer. Further, the substrate is subjected to a second heat treatment, and finally an electrode metal layer is formed on the insulating layer. This method ensures to decrease the interface trap density of MIS type semiconductor device, and thus to improve the capacitance-voltage characteristic of MIS type semiconductor device.
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