发明名称 METHOD FOR MAKING ANODE WITH RUTHENIUM AND FILM FORMING METAL BARRIER LAYERAND ELECTROCATALYTIC TOP LAYER
摘要 A method for making an electrode suitable for use in an electrochemical process, comprises providing a base formed at least partially of at least one valve metal or alloy thereof. To said base, a first composition is applied which is a barrier precursor forming composition comprising a compound of ruthenium, a compound of a film-forming metal and a solvent, to form a coated layer on the base. Thereafter, the coated base is heated at a temperature from room temperature up to about 280.degree.C for a sufficient period of time to dry the coated base without significant decomposition or oxidation of the compound of ruthenium and said compound of filmforming metal. Then, without baking the coated base to decompose and oxidize therein the compound of ruthenium and the compound of film-forming metal, at least one coating from a second composition, different from the first, is applied to the coated base. The second composition contains a solvent and an organic reducing agent and contains a noble metal compound and thus is capable of forming an electrocatalytic coating. After said second composition has been applied the coated base is baked at a temperature of 300 600.degree.C.
申请公布号 CA1292723(C) 申请公布日期 1991.12.03
申请号 CA19870529844 申请日期 1987.02.16
申请人 HURON TECHNOLOGIES INC. 发明人 DONG, DENNIS F.;LOFTFIELD, RICHARD E.
分类号 C25B11/04 主分类号 C25B11/04
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