HIGH-GAIN DIFFERENCIAL AMPLIFIER CIRCUIT FABRICATED FROM FIELD EFFECT TRANSISTORS,申请号US19910672346-传众专利搜索

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发明名称	HIGH-GAIN DIFFERENCIAL AMPLIFIER CIRCUIT FABRICATED FROM FIELD EFFECT TRANSISTORS
摘要
申请公布号	US5070306(A)	申请公布日期	1991.12.03
申请号	US19910672346	申请日期	1991.03.20
申请人	NEC CORPORATION	发明人	OKAMOTO, TOSHIYUKI
分类号	H03F3/345;H03F3/45	主分类号	H03F3/345
代理机构		代理人
主权项
地址

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